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氮化铝铟

维基百科,自由的百科全书

氮化铝铟(InAlN)是氮化铟氮化铝混合物组成的三五族半导体,用在电子学光子学设备里,和广泛使用的氮化镓性质类似。氮化铝铟有大的直接带隙,在高达1000 °C的温度下仍可以稳定工作,因此在需要良好稳定性及可靠度中的应用领域上,会特别关注此半导体[1],像是太空产业英语space industry[2]。InAlN的高电子迁移率晶体管(HEMT)因为其晶格可以和氮化镓配合,可以避免像氮化铝镓HEMT的失效原因,因此在此产业中很受到注意。

InAlN的外延长晶是用有机金属化学气相沉积法[3]分子束外延[4],配合其他半导体材料(例如氮化镓氮化铝及其混合物来产生半导体的芯片,之后用作半导体零件中的主动元件。因为氮化铝氮化铟的性质差异很大[5],最佳成长的狭窄比例区间可能会有污染(形成氮化铝铟镓、晶体品质不良[6],氮化铝铟的外延长晶格外困难,至少比氮化铝镓要困难。针对氮化铝镓最佳化的零件制造技术,需要因为氮化铝铟的不同材料特性而进行调整[7]

参考资料

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  1. ^ Maier, D.; Alomari, M.; Grandjean, N.; Carlin, J.-F.; Diforte-Poisson, M.-A.; et al. InAlN/GaN HEMTs for Operation in the 1000°C Regime: A First Experiment. IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers (IEEE)). 2012, 33 (7): 985–987. Bibcode:2012IEDL...33..985M. ISSN 0741-3106. S2CID 328833. doi:10.1109/led.2012.2196972. 
  2. ^ Smith, M D; O’Mahony, D; Vitobello, F; Muschitiello, M; Costantino, A; et al. A comparison of the 60Co gamma radiation hardness, breakdown characteristics and the effect of SiNx capping on InAlN and AlGaN HEMTs for space applications. Semiconductor Science and Technology (IOP Publishing). 2015-12-14, 31 (2): 025008. ISSN 0268-1242. doi:10.1088/0268-1242/31/2/025008. 
  3. ^ Xue, JunShuai; Hao, Yue; Zhou, XiaoWei; Zhang, JinCheng; Yang, ChuanKai; et al. High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition. Journal of Crystal Growth (Elsevier BV). 2011, 314 (1): 359–364. Bibcode:2011JCrGr.314..359X. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2010.11.157. 
  4. ^ Higashiwaki, M., et al, (2006), Molecular Beam Epitaxy, 2002 International Conference on, p. 235
  5. ^ Smith, Matthew D.; Sadler, Thomas C.; Li, Haoning; Zubialevich, Vitaly Z.; Parbrook, Peter J. The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures. Applied Physics Letters (AIP Publishing). 2013-08-19, 103 (8): 081602. Bibcode:2013ApPhL.103h1602S. ISSN 0003-6951. doi:10.1063/1.4818645. hdl:10468/4280可免费查阅. 
  6. ^ Smith, M. D.; Taylor, E.; Sadler, T. C.; Zubialevich, V. Z.; Lorenz, K.; et al. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD (PDF). Journal of Materials Chemistry C (Royal Society of Chemistry (RSC)). 2014, 2 (29): 5787. ISSN 2050-7526. doi:10.1039/c4tc00480a. 
  7. ^ Smith, M. D.; O'Mahony, D.; Conroy, M.; Schmidt, M.; Parbrook, P. J. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy. Applied Physics Letters (AIP Publishing). 2015-09-14, 107 (11): 113506. Bibcode:2015ApPhL.107k3506S. ISSN 0003-6951. doi:10.1063/1.4930880.